Phase Control Thyristor5STP 45N2800VDRM=2800 VIT(AV)M=5250 AIT(RMS)=8240 AITSM= 77.0103AVT0=0.864 VrT=0.069 mW专利浮动硅

Phase Control Thyristor5STP 33L2800VDRM=2800 VIT(AV)M=3760 AIT(RMS)=5900 AITSM= 65.5103AVT0=0.929 VrT=0.100 m专利浮动

Phase Control Thyristor5STP 24H2800VDRM=2800 VIT(AV)M=2780 AIT(RMS)=4360 AITSM= 43.0103AVT0=0.928 VrT=0.141 mW专利浮动硅

5STP 16F2810Phase control thyristorVDRM, VRRM= 2800 VITAVm= 1500 AITSM= 18000 AVT0= 0.956 VrT= 0.297 mΩ专利浮动硅

Phase Control Thyristor5STP 06D2800VDRM=2800 VIT(AV)M=640 AIT(RMS)=1100 AITSM= 8.8103AVT0=0.92 VrT=0.78 mW 专利浮动硅技

Phase Control Thyristor5STP 50Q1800VDRM=1800 VIT(AV)M=6100 AIT(RMS)=9580 AITSM= 94.0103AVT0=0.90 VrT=0.050 mW 专利浮动硅

Phase Control Thyristor5STP 42L1800VDRM=1800 VIT(AV)M=4310 AIT(RMS)=6770 AITSM= 64.0103AVT0=0.81 VrT=0.08 mW 专利浮动硅

Phase Control Thyristor5STP 27H1800VDRM=1800 VIT(AV)M=2940 AIT(RMS)=4620 AITSM= 50.5103AVT0=0.912 VrT=0.096 mW 专利浮动

5STP 18F1810Phase control thyristorVDRM, VRRM= 1800 VITAVm= 1780 AITSM= 21000 AVT0= 0.923 VrT= 0.188 mΩ 专利浮动硅

Phase Control Thyristor5STP 07D1800VDRM=1800 VIT(AV)M=760 AIT(RMS)=1190 AITSM= 9.0103AVT0=0.927 VrT=0.448 m 专利浮动硅

Gate turn-off Thyristor5SGF 30J4502PRELIMINARYVDRM= 4500 VITGQM= 3000 AITSM= 24 kAVT0= 1.80 VrT= 0.70 mΩVDClin= 3000 V

Asymmetric Gate turn-offThyristor5SGF 40L4502VDRM=4500 VITGQM=4000 AITSM= 25103AVT0=1.2 VrT=0.65 mWVDclink=2800 V专利自

Asymmetric Gate turn-off Thyristor5SGA 40L4501VDRM= 4500 VITGQM= 4000 AITSM= 25103AVT0= 2.1 VrT= 0.58 mWVDclink= 2800 V

Asymmetric Gate turn-offThyristor5SGA 30J4502VDRM= 4500 VITGQM= 3000 AITSM= 24103AVT0= 2.2 VrT= 0.6 mΩVDclink= 2800 V专

Gate turn-off Thyristor5SGA 20H4502VDRM= 4500 VITGQM= 2000 AITSM= 13 kAVT0= 1.80 VrT= 0.85 mΩVDClin= 2200 V 专利自由漂

Asymmetric Gate turn-offThyristor5SGA 06D4502PRELIMINARYVDRM=4500 VITGQM=600 AITSM=3103AVT0=1.9 VrT=3.5 mWVDclink=2800 V

Gate turn-off Thyristor5SGA 30J2501VDRM= 2500 VITGQM= 2800 AITSM=30 kAVT0=1.5 VrT= 0.33 mVDClink= 1400 V 专利自由漂浮

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Gate turn-off Thyristor5SGA 25H2501VDRM= 2500 VITGQM= 2500 AITSM=16 kAVT0=1.66 VrT=0.57 mWVDClin= 1400 V专利自由漂浮硅技

Gate turn-off Thyristor5SGA 20H2501VDRM= 2500 VITGQM= 2000 AITSM=16 kAVT0=1.66 VrT=0.57 mWVDClin= 1400 V专利自由漂浮硅技